MURS205T3G_12 Datasheet, PDF (2/5 Pages) ON Semiconductor – Surface Mount Ultrafast Power Rectifiers

MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURA205T3G, SURS8205T3G
MURA210T3G, SURS8210T3G
Rating
Symbol
V_RRM
V_RWM
V_R
Value
50
100
Unit
V
Average Rectified Forward Current
@ T_L = 150C
@ T_L = 125C
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_F(AV)
A
1.0
2.0
I_FSM
A
50
Operating Junction Temperature
T_J
−60 to +175
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (T_L = 25C)
Symbol
R_qJL
Max
13
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 2.0 A, T_J = 25C)
(i_F = 2.0 A, T_J = 150C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T_J = 25C)
(Rated dc Voltage, T_J = 150C)
Maximum Reverse Recovery Time
(i_F = 1.0 A, di/dt = 50 A/ms)
(i_F = 0.5 A, i_R = 1.0 A, I_R to 0.25 A)
Maximum Forward Recovery Time
(i_F = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.
Symbol
v_F
i_R
t_rr
t_fr
Value
0.94
0.74
2.0
50
30
20
20
Unit
V
mA
ns
ns
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