MURHS160T3G Datasheet, PDF (2/5 Pages) ON Semiconductor – Power Rectifier

MURHS160T3G, NRVUHS160VT3G, SURHS8160T3G
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance, Junction−to−Lead (Note 1)
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
Symbol
R_qJL
R_qJA
Value
24
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(I_F = 1.0 A, T_C = 25°C)
(I_F = 1.0 A, T_C = 125°C)
V_F
V
1.5
2.4
1.2
1.7
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T_C = 25°C)
(Rated dc Voltage, T_C = 125°C)
I_R
mA
0.18
20
5.0
200
Maximum Reverse Recovery Time
(I_F = 1.0 A, di/dt = 50 A/ms)
(I_F = 0.5 A, I_R = 1.0 A, I_REC = 0.25 A)
t_rr
ns
25
35
16
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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