MURHD560T4G_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – Power Rectifier

MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R, T_C = 159°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
V_RRM
600
V
V_RWM
V_R
I_F(AV)
A
5.0
I_FSM
A
50
Operating Junction and Storage Temperature Range
T_J, T_stg
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Maximum Thermal Resistance, Junction to Case
R_qJC
Maximum Thermal Resistance, Junction to Ambient (Note 1)
R_qJA
1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm² Cu area.
Value
2.5
49.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(I_F = 5.0 Amps, T_C = 25°C)
(I_F = 5.0 Amps, T_C = 125°C)
V_F
V
2.7
1.65
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T_C = 25°C)
(Rated dc Voltage, T_C = 125°C)
I_R
mA
10
70
Maximum Reverse Recovery Time
(I_F = 1.0 Amp, di/dt = 50 Amps/ms, V_R = 30 V, T_J = 25°C)
t_rr
ns
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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