MURD620CT_16 Datasheet, PDF (2/5 Pages) ON Semiconductor – Switch-mode Power Rectifier

MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V_R, T_C = 140°C)
Per Diode
Per Device
Rating
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
Value
200
3.0
6.0
Unit
V
A
Peak Repetitive Forward Current
(Rated V_R, Square Wave, 20 kHz, T_C = 145°C)
Per Diode
I_F
A
6.0
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
I_FSM
A
50
Operating Junction and Storage Temperature Range
T_J, T_stg
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 1)
1. Rating applies when surface mounted on the minimum pad sizes recommended.
Symbol
R_qJC
R_qJA
Value
9
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage Drop (Note 2)
(i_F = 3 Amps, T_C = 25°C)
(i_F = 3 Amps, T_C = 125°C)
(i_F = 6 Amps, T_C = 25°C)
(i_F = 6 Amps, T_C = 125°C)
v_F
V
1
0.96
1.2
1.13
Maximum Instantaneous Reverse Current (Note 2)
(T_J = 25°C, Rated dc Voltage)
(T_J = 125°C, Rated dc Voltage)
i_R
mA
5
250
Maximum Reverse Recovery Time
(I_F = 1 Amp, di/dt = 50 Amps/ms, V_R = 30 V, T_J = 25°C)
(I_F = 0.5 Amp, i_R = 1 Amp, I_REC = 0.25 A, V_R = 30 V, T_J = 25°C)
t_rr
ns
35
25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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