English
Language : 

MURD340T4G_12 Datasheet, PDF (2/4 Pages) ON Semiconductor – SWITCHMODE PowerRectifier
MURD340T4G, NRVUD340T4G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient (Note 1)
1. Rating applies when surface mounted on a 700 mm2, 1 oz Cu heat spreader.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
(IF = 3.0 A, TJ = 25C)
(IF = 3.0 A, TJ = 150C)
Maximum Instantaneous Reverse Current (Rated VR)
(TJ = 25C, 400 V)
(TJ = 150C, 400 V)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25C)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Symbol
RqJC
RqJA
Symbol
VF
IR
trr
Value
2
49
Value
1.15
0.92
5
500
50
> 400
> 8000
Unit
C/W
C/W
Unit
V
mA
ns
V
100.0
TYPICAL CHARACTERISTICS
100.0
10.0
175C
1.0
150C
25C
10.0
175C
150C
25C
1.0
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VF, INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
http://onsemi.com
2