MURD320_04 Datasheet, PDF (2/4 Pages) ON Semiconductor – ULTRAFAST RECTIFIER 3.0 AMPERES, 200 VOLTS

MURD320
THERMAL CHARACTERISTICS
Rating
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage Drop (Note 2)
(i_F = 3 Amps, T_J = 25°C)
(i_F = 3 Amps, T_J = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(T_J = 25°C, Rated dc Voltage)
(T_J = 125°C, Rated dc Voltage)
Maximum Reverse Recovery Time
(I_F = 1 Amp, di/dt = 50 Amps/ms, V_R = 30 V, T_J = 25°C)
(I_F = 0.5 Amp, i_R = 1 Amp, I_REC = 0.25 A, V_R = 30 V, T_J = 25°C)
1. Rating applies when surface mounted on the minimum pad sizes recommended.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
R_qJC
R_qJA
v_F
i_R
t_rr
Value
6
80
0.95
0.75
5
500
35
25
Unit
°C/W
°C/W
Volts
mA
ns
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.08
0.04
0.02
0.008
0.004
0.002
T_J = 175°C
150°C
100°C
25°C
0 20 40 60 80 100 120 140 160 180 200
V_R, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
175°C
150°C
T_J = 25°C
100°C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
v_F, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V_R is sufficiently below rated
V_R.
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
10
I_PK/I_AV = 20
SINE WAVE
SQUARE WAVE
5.0
dc
T_J = 175°C
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
I_F(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Average Power Dissipation
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