MURA105 Datasheet, PDF (2/5 Pages) EIC discrete Semiconductors – SURFACE MOUNT ULTRAFAST RECTIFIERS

MURA105, SURA8105, MURA110, NRVUA110V, SURA8110
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURA105T3G, SURA8105T3G
MURA110T3G, SURA8110T3G, NRVUA110VT3G
Symbol
V_RRM
V_RWM
V_R
Value
50
100
Unit
V
Average Rectified Forward Current
@ T_L = 155°C
@ T_L = 135°C
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I_F(AV)
A
1.0
2.0
I_FSM
A
50
Operating Junction Temperature Range
T_J
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Psi_JL
24
(Note 2)
R_qJA
216
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by R_qJL) are now referenced as Psi_JL.
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(i_F = 1.0 A, T_J = 25°C)
(i_F = 1.0 A, T_J = 150°C)
v_F
V
0.875
0.66
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 150°C)
i_R
mA
2.0
50
Maximum Reverse Recovery Time
(i_F = 1.0 A, di/dt = 50 A/ms)
t_rr
ns
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
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