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| MUR820_06 Datasheet, PDF (2/7 Pages) ON Semiconductor – ULTRAFAST RECTIFIERS 8.0 AMPERES, 50−600 VOLTS | |||
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MUR805, MUR810, MUR815, MUR820, MUR840, MUR860
MAXIMUM RATINGS
MUR
Rating
Symbol 805 810 815 820 840 860 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
50 100 150 200 400 600
V
VRWM
VR
Average Rectified Forward Current
Total Device, (Rated VR), TC = 150°C
IF(AV)
8.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 150°C
IFM
16
A
Nonrepetitive Peak Surge Current
IFSM
100
A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature Range
TJ, Tstg
â65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance, JunctionâtoâCase
MUR
Symbol 805 810 815 820 840 860 Unit
RqJC
3.0
2.0
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ⤠2.0%.
MUR
Symbol 805 810 815 820 840 860 Unit
vF
V
0.895
1.00 1.20
0.975
1.30 1.50
iR
250
5.0
mA
500
10
trr
35
25
ns
60
50
http://onsemi.com
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