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| MUR805G_14 Datasheet, PDF (2/8 Pages) ON Semiconductor – Switch-mode Power Rectifiers | |||
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MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated VR), TC = 150°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 150°C
MUR/SUR8
Symbol 805 810 815 820 840 860
VRRM
VRWM
VR
50 100 150 200 400 600
IF(AV)
8.0
Unit
V
A
IFM
16
A
Nonrepetitive Peak Surge Current
IFSM
100
A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature Range
TJ, Tstg
â65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, JunctionâtoâCase
Thermal Resistance, JunctionâtoâCase
MURF860
Thermal Resistance, JunctionâtoâAmbient
Thermal Resistance, JunctionâtoâAmbiente
MURF860
MUR/SUR8
Symbol 805 810 815 820 840 860 Unit
RqJC
3.0
2.0
°C/W
RqJC
°C/W
4.75
RqJA
RqJA
73
°C/W
°C/W
75
ELECTRICAL CHARACTERISTICS
MUR/SUR8
Characteristic
Symbol 805 810 815 820 840 860 Unit
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
vF
V
0.895
1.00 1.20
0.975
1.30 1.50
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
iR
250
5.0
mA
500
10
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr
35
25
ns
60
50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ⤠2.0%.
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