MUR550 Datasheet, PDF (2/8 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

MUR550APF, MURD550PF, MUR550PF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
520
V
V_RWM
V_R
Average Rectified Forward Current
(Rated V_R) T_C = 65°C
(Rated V_R) T_C = 160°C
I_F(AV)
5.0
A
MUR550APF
MURD550PF, MUR550PF
Non−Repetitive Peak Surge Current
I_FSM
A
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
MUR550APF
85
MURD550PF
75
MUR550PF
100
Operating Junction Temperature Range
Storage Temperature Range
ESD Ratings:
Machine Model = C
Human Body Model = 3B
T_J
T_stg
ESD
−65 to +175
°C
−65 to +175
°C
V
> 400
>8000
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Case (Note 1)
MURD550PF, MUR550PF
Thermal Resistance, Junction−to−Ambient
MUR550APF
MURD550PF (Note 3)
1. Rating applies when surface mounted on the minimum pad sizes recommended.
2. See Note 2, Ambient Mounting Data.
3. 1 inch square pad size on FR4 board.
Symbol
R_qJC
R_qJA
Value
2.8
Note 2
62
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Maximum Instantaneous Forward Voltage Drop (Note 4)
(I_F = 5.0 A, T_J = 25°C)
(I_F = 5.0 A, T_J = 150°C)
Maximum Instantaneous Reverse Current (Note 4)
(V_R = 520 V, T_J = 25°C)
(V_R = 520 V, T_J = 150°C)
Maximum Reverse Recovery Time
(I_F = 1.0 A, di/dt = 50 A/ms, V_R = 30 V, T_J = 25°C)
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
V_F
I_R
t_rr
Value
1.15
0.98
5.0
400
95
Unit
V
mA
ns
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