MUR2100E Datasheet, PDF (2/6 Pages) ON Semiconductor – Ultrafast “E” Series with High Reverse Energy Capability

MUR2100E
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(I_F = 2.0 A, T_J = 150°C)
(I_F = 2.0 A, T_J = 25°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T_J = 100°C)
(Rated dc Voltage, T_J = 25°C)
Maximum Reverse Recovery Time
(I_F = 1.0 A, di/dt = 50 A/ms)
(I_F = 0.5 A, I_R = 1.0 A, I_REC = 0.25 A)
Maximum Forward Recovery Time
(I_F = 1.0 A, di/dt = 100 A/ms, I_REC to 1.0 V)
Controlled Avalanche Energy (See Test Circuit in Figure 6)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
V_F
i_R
t_rr
t_fr
W_AVAL
Value
1.75
2.20
600
10
100
75
75
10
Unit
V
mA
ns
ns
mJ
10
V_F @ 175°C
10
V_F @ 175°C
100°C
1.0
150°C
1.0
150°C
100°C
25°C
25°C
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_F, INSTANTANEOUS VOLTAGE (V)
Figure 1. Maximum Forward Voltage
0.1
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_F, INSTANTANEOUS VOLTAGE (V)
Figure 2. Typical Forward Voltage
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