MUR2020R_13 Datasheet, PDF (2/5 Pages) ON Semiconductor – SWITCHMODE Ultrafast Power Rectifier

MUR2020R
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Voltage,
(Rated V_R), T_C = 125°C
Peak Repetitive Forward Current
(Rated V_R), T_C = 125°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Value
Unit
V_RRM
200
V
V_RWM
V_R
I_F(AV)
20
A
I_FRM
40
A
I_FSM
250
A
Operating Junction Temperature and Storage Temperature Range
T_J, T_stg
−65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Min. Pad
Min. Pad
Symbol
R_qJC
R_qJA
Max
2.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(i_F = 20 Amps, T_j = 25°C)
(i_F = 20 Amps, Tj = 150°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 150°C)
Maximum Reverse Recovery Time
(I_F = 1.0 Amps, di/dt = 50 A/ms)
(I_F = 1.0 Amps, di/dt = 100 A/ms)
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
Symbol
Min
v_F
−
−
i_R
−
−
t_rr
−
−
Typical
0.97
0.79
0.1
0.225
−
−
Max
1.1
1.0
50
1.0
95
75
Unit
V
mA
mA
ns
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