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| MUR1620CT_06 Datasheet, PDF (2/7 Pages) ON Semiconductor – ULTRAFAST RECTIFIERS 8.0 AMPERES, 100−600 VOLTS | |||
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MUR1610CT, MUR1615CT, MUR1620CT, MUR1640CT, MUR1660CT
MAXIMUM RATINGS
MUR16
Rating
Symbol 10CT 15CT 20CT 40CT 60CT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
100 150 200 400 600
V
VRWM
VR
Average Rectified Forward Current
Per Leg IF(AV)
8.0
A
Total Device, (Rated VR), TC = 150°C
Total Device
16
Peak Rectified Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 150°C
Per Diode Leg
IFM
16
A
Nonrepetitive Peak Surge Current
IFSM
100
A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
TJ, Tstg
*65 to +175
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Per Diode Leg)
Parameter
Maximum Thermal Resistance, JunctionâtoâCase
Symbol
RqJC
Value
3.0
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TC = 150°C)
(Rated DC Voltage, TC = 25°C)
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ⤠2.0%
Symbol
vF
iR
trr
1620
0.895
0.975
250
5.0
35
25
1640 1660 Unit
V
1.00 1.20
1.30 1.50
mA
500
10
ns
60
50
http://onsemi.com
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