MUR1610CTG Datasheet, PDF (2/7 Pages) ON Semiconductor – Switch Mode Power Rectifiers

MUR1610CTG, MUR1615CTG, MUR1620CTG, MUR1640CTG, MUR1660CTG
MAXIMUM RATINGS
MUR16
Rating
Symbol 10CT 15CT 20CT 40CT 60CT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
100 150 200 400 600
V
V_RWM
V_R
Average Rectified Forward Current
Per Leg I_F(AV)
8.0
A
Total Device, (Rated V_R), T_C = 150°C
Total Device
16
Peak Rectified Forward Current
Per Diode Leg
I_FM
(Rated V_R, Square Wave, 20 kHz), T_C = 150°C
16
A
Nonrepetitive Peak Surge Current
I_FSM
100
A
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
T_J, T_stg
*65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Per Diode Leg)
Parameter
Maximum Thermal Resistance, Junction−to−Case
Symbol
R_qJC
Value
3.0
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
1620
1640 1660 Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 8.0 A, T_C = 150°C)
(i_F = 8.0 A, T_C = 25°C)
v_F
V
0.895
1.00 1.20
0.975
1.30 1.50
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T_C = 150°C)
(Rated DC Voltage, T_C = 25°C)
i_R
250
5.0
mA
500
10
Maximum Reverse Recovery Time
(I_F = 1.0 A, di/dt = 50 A/ms)
(I_F = 0.5 A, I_R = 1.0 A, I_REC = 0.25 A)
t_rr
35
25
ns
60
50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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