MUR120_13 Datasheet, PDF (2/7 Pages) ON Semiconductor – SWITCHMODE Power Rectifiers

MUR120 Series
MAXIMUM RATINGS
MUR
Rating
Symbol 105 110 115 120 130 140 160 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
V_RRM
50 100 150 200 300 400 600
V
V_RWM
V_R
I_F(AV)
1.0 @ T_A = 130°C
1.0 @ T_A = 120°C
A
Nonrepetitive Peak Surge Current
I_FSM
35
A
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
T_J, T_stg
*65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Ambient
Symbol
R_qJA
Max
Note 2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i_F = 1.0 Amp, T_J = 150°C)
(i_F = 1.0 Amp, T_J = 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T_J = 150°C)
(Rated DC Voltage, T_J = 25°C)
Maximum Reverse Recovery Time
(I_F = 1.0 A, di/dt = 50 A/ms)
(I_F = 0.5 A, i_R = 1.0 A, I_REC = 0.25 A)
Maximum Forward Recovery Time
(I_F = 1.0 A, di/dt = 100 A/ms, I_REC to 1.0 V)
Typical Peak Reverse Recovery Current
(I_F = 1.0 A, di/dt = 50 A/ms)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol
v_F
i_R
t_rr
t_fr
I_RM
Value
0.710
1.05
0.875
1.25
50
150
2.0
5.0
35
75
25
50
25
50
0.85
Unit
V
mA
ns
ns
A
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