MUN5335DW1T1 Datasheet, PDF (2/34 Pages) ON Semiconductor – Dual Bias Resistor Transistors

MUN5311DW1T1 Series
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping^†
MUN5311DW1T1
SOT−363
11
10
10
3000/Tape & Reel
MUN5312DW1T1
SOT−363
12
22
22
3000/Tape & Reel
MUN5313DW1T1
SOT−363
13
47
47
3000/Tape & Reel
MUN5314DW1T1
SOT−363
14
10
47
3000/Tape & Reel
MUN5315DW1T1
SOT−363
15
10
∞
3000/Tape & Reel
MUN5316DW1T1
SOT−363
16
4.7
∞
3000/Tape & Reel
MUN5316DW1T1G
SOT−363
16
4.7
∞
3000/Tape & Reel
(Pb−Free)
MUN5330DW1T1
SOT−363
30
1.0
1.0
3000/Tape & Reel
MUN5331DW1T1
SOT−363
31
2.2
2.2
3000/Tape & Reel
MUN5332DW1T1
SOT−363
32
4.7
4.7
3000/Tape & Reel
MUN5333DW1T1
SOT−363
33
4.7
47
3000/Tape & Reel
MUN5334DW1T1
SOT−363
34
22
47
3000/Tape & Reel
MUN5335DW1T1
SOT−363
35
2.2
47
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted, common for Q₁ and Q₂, − minus sign for Q₁ (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V_CB = 50 V, I_E = 0)
I_CBO
−
Collector-Emitter Cutoff Current (V_CE = 50 V, I_B = 0)
I_CEO
−
Emitter-Base Cutoff Current
(V_EB = 6.0 V, I_C = 0)
MUN5311DW1T1
I_EBO
−
MUN5312DW1T1
−
MUN5313DW1T1
−
MUN5314DW1T1
−
MUN5315DW1T1
−
MUN5316DW1T1
−
MUN5330DW1T1
−
MUN5331DW1T1
−
MUN5332DW1T1
−
MUN5333DW1T1
−
MUN5334DW1T1
−
MUN5335DW1T1
−
−
100
nAdc
−
500
nAdc
−
0.5
mAdc
−
0.2
−
0.1
−
0.2
−
0.9
−
1.9
−
4.3
−
2.3
−
1.5
−
0.18
−
0.13
−
0.2
Collector-Base Breakdown Voltage (I_C = 10 mA, I_E = 0)
V_(BR)CBO
50
−
Collector-Emitter Breakdown Voltage (Note 3) (I_C = 2.0 mA, I_B = 0)
V_(BR)CEO
50
−
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
−
Vdc
−
Vdc
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