MUN5315DW1 Datasheet, PDF (2/7 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5315DW1, NSBC114TPDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5315DW1 (SOT−363) One Junction Heated
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
MUN5315DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R_qJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R_qJL
Junction and Storage Temperature Range
NSBC114TPDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
T_A = 25°C
Derate above 25°C
(Note 1)
(Note 1)
T_J, T_stg
P_D
Thermal Resistance,
Junction to Ambient
(Note 1)
R_qJA
NSBC114TPDXV6 (SOT−563) Both Junction Heated (Note 3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
R_qJA
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
T_J, T_stg
Max
Unit
187
mW
256
1.5
mW/°C
2.0
670
°C/W
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
357
mW
2.9
mW/°C
°C/W
350
500
4.0
250
−55 to +150
mW
mW/°C
°C/W
°C
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