MUN5311DW1T1 Datasheet, PDF (2/16 Pages) Motorola, Inc – Dual Bias Resistor Transistors

MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q1 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5311DW1T1
IEBO
—
MUN5312DW1T1
—
MUN5313DW1T1
—
MUN5314DW1T1
—
MUN5315DW1T1
—
MUN5316DW1T1
—
MUN5330DW1T1
—
MUN5331DW1T1
—
MUN5332DW1T1
—
MUN5333DW1T1
—
MUN5334DW1T1
—
MUN5335DW1T1
—
—
100
nAdc
—
500
nAdc
—
0.5
mAdc
—
0.2
—
0.1
—
0.2
—
0.9
—
1.9
—
4.3
—
2.3
—
1.5
—
0.18
—
0.13
—
0.2
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
—
—
Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
—
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW1T1
hFE
MUN5312DW1T1
35
60
—
60
100
—
MUN5313DW1T1
80
140
—
MUN5314DW1T1
80
140
—
MUN5315DW1T1
160
350
—
MUN5316DW1T1
160
350
—
MUN5330DW1T1
3.0
5.0
—
MUN5331DW1T1
8.0
15
—
MUN5332DW1T1
15
30
—
MUN5333DW1T1
80
200
—
MUN5334DW1T1
80
150
—
MUN5335DW1T1
80
140
—
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VCE(sat)
—
(IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1
(IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
—
0.25
Vdc
Output Voltage (on)
VOL
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
MUN5311lDW1T1
—
MUN5312DW1T1
—
MUN5314DW1T1
—
MUN5315DW1T1
—
MUN5316DW1T1
—
MUN5330DW1T1
—
MUN5331DW1T1
—
MUN5332DW1T1
—
MUN5333DW1T1
—
MUN5334DW1T1
—
MUN5335DW1T1
—
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
MUN5313DW1T1
—
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Vdc
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data