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| MUN5234DW1 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual NPN Bias Resistor Transistors | |||
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MUN5234DW1, NSBC124XDXV6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5234DW1 (SOTâ363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5234DW1 (SOTâ363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 2)
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBC124XDXV6 (SOTâ563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBC124XDXV6 (SOTâ563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25ï°C
Derate above 25ï°C
PD
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FRâ4 @ Minimum Pad.
2. FRâ4 @ 1.0 ï´ 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
Max
187
256
1.5
2.0
670
490
250
385
2.0
3.0
493
325
188
208
â55 to +150
357
2.9
350
500
4.0
250
â55 to +150
Unit
mW
mW/ï°C
ï°C/W
mW
mW/ï°C
ï°C/W
ï°C/W
ï°C
mW
mW/ï°C
ï°C/W
mW
mW/ï°C
ï°C/W
ï°C
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