MTDF1P02HD Datasheet, PDF (2/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM

MTDF1P02HD
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage – Continuous
1″ SQ.
FR–4 or G–10 PCB
Figure 1 below
1 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
Minimum
FR–4 or G–10 PCB
Figure 2 below
1 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
Minimum
FR–4 or G–10 PCB
Figure 2 below
2 die operating
Steady State
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current – Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (Note 1.)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 3.6 Apk, L = 25 mH, RG = 25 W)
1. Repetitive rating; pulse width limited by maximum junction temperature.
Symbol
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
TJ, Tstg
EAS
Max
20
20
± 8.0
100
1.25
10
2.3
1.9
19
200
0.63
5.0
1.6
1.3
13
300
0.42
3.33
1.3
1.1
11
– 55 to 150
160
Unit
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C
mJ
Figure 1. 1, Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
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