MSD601-RT1 Datasheet, PDF (2/4 Pages) Leshan Radio Company – NPN General Purpose Amplifier Transistors Surface Mount

MSD601−RT1, MSD601−ST1
ELECTRICAL CHARACTERISTICS (T_A = 25°C)
Characteristic
Collector − Emitter Breakdown Voltage
(I_C = 2.0 mAdc, I_B = 0)
Collector − Base Breakdown Voltage
(I_C = 10 mAdc, I_E = 0)
Emitter − Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
Collector − Base Cutoff Current
(V_CB = 45 Vdc, I_E = 0)
Collector − Emitter Cutoff Current
(V_CE = 10 Vdc, I_B = 0)
DC Current Gain (Note 1)
(V_CE = 10 Vdc, I_C = 2.0 mAdc)
MSD601−RT1
MSD601−ST1
(V_CE = 2.0 Vdc, I_C = 100 mAdc)
Collector − Emitter Saturation Voltage
(I_C = 100 mAdc, I_B = 10 mAdc)
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Symbol
Min
Max
Unit
V_(BR)CEO
50
−
Vdc
V_(BR)CBO
60
−
Vdc
V_(BR)EBO
70
−
Vdc
I_CBO
−
0.1
mAdc
I_CEO
−
100
nAdc
h_FE1
h_FE2
V_CE(sat)
−
210
340
290
460
90
−
−
0.5
Vdc
ORDERING INFORMATION
Device
Package
Shipping^†
MSD−601RT1
SC−59
3000 Units / Reel
MSD−601RT1G
SC−59
(Pb−Free)
3000 Units / Reel
MSD−601ST1
SC−59
3000 Units / Reel
MSD−601ST1G
SC−59
(Pb−Free)
3000 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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