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MMVL3700T1 Datasheet, PDF (2/3 Pages) Leshan Radio Company – High Voltage Silicon Pin Diode | |||
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MMVL3700T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mAdc)
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
Series Resistance
(IF = 10 mAdc)
Reverse Leakage Current
(VR = 150 Vdc)
Reverse Recovery Time
(IF = IR = 10 mAdc)
Symbol
V(BR)R
CT
RS
IR
trr
Min
Typ
Max
Unit
200
â
â
Vdc
â
â
1.0
pF
â
0.7
1.0
W
â
â
0.1
mAdc
â
300
â
ns
TYPICAL CHARACTERISTICS
3.2
2.8
TA = 25°C
2.4
2.0
1.6
1.2
0.8
0.4
0
0 2.0 4.0 6.0 8.0 10 12 14 16
IF, FORWARD CURRENT (mA)
Figure 1. Series Resistance
10
8.0
6.0
4.0
2.0
TA = 25°C
1.0
0.8
0.6
0.4
0.2
0.1
0 â10 â20 â30 â40 â50
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
800
700
600
500
400
TA = 25°C
300
200
100
0
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
100
40
10
4.0
1.0
0.4
0.1
0.04
0.01
0.004
0.001
â60
VR = 15 Vdc
â20 0 +20
+60
+100
+140
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Leakage Current
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