MMVL109T1 Datasheet, PDF (2/3 Pages) Leshan Radio Company – Silicon Epicap Diode

MMVL109T1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (I_R = 10 mAdc)
Reverse Voltage Leakage Current (V_R = 25 Vdc)
Diode Capacitance Temperature Coefficient
(V_R = 3.0 Vdc, f = 1.0 MHz)
V_(BR)R
30
−
−
Vdc
I_R
−
−
0.1
mAdc
TC_C
−
300
−
ppm/°C
C_t, Diode Capacitance
V_R = 3.0 Vdc, f = 1.0 MHz
pF
Device
Min
Nom
Max
MMVL109T1
26
29
32
2. C_R is the ratio of C_t measured at 3 Vdc divided by C_t measured at 25 Vdc.
Q, Figure of Merit
V_R = 3.0 Vdc
f = 50 MHz
Min
200
C_R, Capacitance Ratio
C₃/C₂₅
f = 1.0 MHz (Note 2)
Min
Max
5.0
6.5
40
1000
36
32
28
24
20
100
16
12
f = 1.0 MHz
8
T_A = 25°C
4
0
1
3
10
30
V_R, REVERSE VOLTAGE (VOLTS)
10
100
10
Figure 1. DIODE CAPACITANCE
V_R = 3 Vdc
T_A = 25°C
100
1000
f, FREQUENCY (MHz)
Figure 2. FIGURE OF MERIT
100
60
20
10
6.0
2.0
V_R = 20 Vdc
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
0.002
0.001
−60 −40 −20 0 +20 +40 +60 +80 +100 +120 +140
T_A, AMBIENT TEMPERATURE
Figure 3. LEAKAGE CURRENT
1.04
1.03
V_R = 3.0 Vdc
f = 1.0 MHz
1.02
C_t [ C_c + C_j
1.01
1.00
0.99
0.98
0.97
0.96
−75
−50 −25 0 +25 +50 +75 +100 +125
T_A, AMBIENT TEMPERATURE
Figure 4. DIODE CAPACITANCE
http://onsemi.com
2