MMT10B230T3_05 Datasheet, PDF (2/6 Pages) ON Semiconductor – Thyristor Surge Protectors High Voltage Bidirectional TSPD

MMT10B230T3, MMT10B260T3, MMT10B310T3
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Off−State Voltage − Maximum
V_DM
V
MMT10B230T3
"170
MMT10B260T3
"200
MMT10B310T3
"270
Maximum Pulse Surge Short Circuit Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2) (−20°C to +65°C)
2 x 10 msec
10 x 700 msec
10 x 1000 msec
A(pk)
I_PPS1
I_PPS2
I_PPS3
"500
"180
"100
Maximum Non−Repetitive Rate of Change of On−State Current
Double Exponential Waveform,
R = 2.0, L = 1.5 mH, C = 1.67 mF,
I_pk = 110A
di/dt
"100
A/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
T_J1
−40 to + 125 °C
Overload Junction Temperature − Maximum Conducting State Only
Instantaneous Peak Power Dissipation (I_pk = 100 A, 10x1000 msec @ 25°C)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T_J2
+ 175
°C
P_PK
4000
W
T_L
260
°C
ORDERING INFORMATION
Device
Package
Shipping^†
MMT10B230T3
SMB
MMT10B230T3G
SMB
(Pb−Free)
MMT10B260T3
MMT10B260T3G
SMB
SMB
(Pb−Free)
(12mm) Tape & Reel
2500 Units per Reel
MMT10B310T3
SMB
MMT10B310T3G
SMB
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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