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MMT08B310T3_05 Datasheet, PDF (2/6 Pages) ON Semiconductor – Thyristor Surge Protectors High Voltage Bidirectional TSPD
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MMT08B310T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
TJ1
−40 to + 125
°C
Overload Junction Temperature − Maximum Conducting State Only
TJ2
+ 175
°C
Instantaneous Peak Power Dissipation (Ipk = 50 A, 10x1000 μsec @ 25°C)
PPK
2000
W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Symbol
Breakover Voltage (Both polarities)
(dv/dt = 100 V/μs, ISC = 1.0 A, Vdc = 1000 V)
(+65°C)
MMT08B310T3
MMT08B310T3
V(BO)
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kΩ, t = 0.5 cycle) (Note 3)
(+65°C)
MMT08B310T3
MMT08B310T3
V(BO)
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 μs, Duty Cycle ≤ 2%) (Note 3)
MMT08B310T3
dV(BO)/dTJ
V(BR)
ID1
ID2
VT
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ)
IBO
Both polarities
Holding Current (Both polarities)
VS = 500 Volts; IT (Initiating Current) = "1.0 Amp
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
3. Measured under pulse conditions to reduce heating.
(Note 3)
IH
dv/dt
CO
Min
−
−
−
−
−
−
−
−
−
−
150
2000
−
−
Typ
−
−
−
−
0.08
310
−
−
1.53
230
340
−
23
−
Max
Unit
V
365
400
V
365
400
−
%/°C
−
V
2.0
μA
5.0
3.0
V
−
mA
−
mA
−
V/μs
25
pF
50
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
ID1, ID2
VD1, VD2
VBR
VBO
IBO
IH
VTM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
VTM
V(BO)
IH
ID1
ID2
I(BO)
+ Voltage
VD1 VD2 V(BR)
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