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MMT05B064T3 Datasheet, PDF (2/5 Pages) ON Semiconductor – Thyristor Surge Protectors
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MMT05B064T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range Blocking or Conducting State
TJ1
Overload Junction Temperature − Maximum Conducting State Only
TJ2
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
−40 to + 125
°C
+ 175
°C
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics
Symbol Min Typ Max Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V)
(+65°C)
V(BO)
V
−
−
77
−
−
80
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kW, t = 0.5 cycle) (Note 3)
(+65°C)
V(BO)
V
−
−
77
−
−
80
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
dV(BO)/dTJ − 0.054 −
V(BR)
58
−
−
ID1
−
−
2.0
ID2
−
−
5.0
VT
−
−
3.0
V/°C
V
mA
V
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW)
Both polarities
IBO
−
91
−
mA
Holding Current (Both polarities) (Note 3)
VS = 500 V; IT (Initiating Current) = "1.0 A (+65°C)
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
3. Measured under pulse conditions to reduce heating.
IH
dv/dt
150
−
130
−
2000 −
−
mA
−
−
V/ms
CO
−
42
−
pF
−
80
−
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
ID1, ID2
VD1, VD2
VBR
VBO
IBO
IH
VTM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
VTM
V(BO)
IH
ID1
ID2
I(BO)
+ Voltage
VD1 VD2 V(BR)
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