MMDL301T1G Datasheet, PDF (2/3 Pages) ON Semiconductor – Silicon Hot-Carrier Diodes

MMDL301T1G
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
500
f = 1.0 MHz
2.4
400
2.0
KRAKAUER METHOD
1.6
300
1.2
200
0.8
100
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
I_F, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
1.0
0.1
0.01
0.001
0
T_A = 100°C
75°C
25°C
6.0
12
18
24
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
100
10
T_A = 85°C
T_A = - 40°C
1.0
T_A = 25°C
0.1
30
0.2
0.4
0.6
0.8
1.0
1.2
V_F, FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
SINUSOIDAL
GENERATOR
I_F(PEAK)
CAPACITIVE
CONDUCTION
I_R(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
BALLAST
NETWORK
(PADS)
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
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