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MMDFS3P303 Datasheet, PDF (2/12 Pages) ON Semiconductor – Power MOSFET 3 Amps, 30 Volts | |||
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MMDFS3P303
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
Average Forward Current (Note 3.)
IO
(Rated VR) TA = 100°C
Peak Repetitive Forward Current (Note 3.)
Ifrm
(Rated VR, Square Wave, 20 kHz) TA = 105°C
NonâRepetitive Peak Surge Current
Ifsm
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
THERMAL CHARACTERISTICS â SCHOTTKY AND MOSFET
Thermal Resistance â JunctionâtoâAmbient (Note 4.) â MOSFET
RqJA
Thermal Resistance â JunctionâtoâAmbient (Note 5.) â MOSFET
RqJA
Thermal Resistance â JunctionâtoâAmbient (Note 3.) â MOSFET
RqJA
Thermal Resistance â JunctionâtoâAmbient (Note 4.) â Schottky
RqJA
Thermal Resistance â JunctionâtoâAmbient (Note 5.) â Schottky
RqJA
Thermal Resistance â JunctionâtoâAmbient (Note 3.) â Schottky
RqJA
Operating and Storage Temperature Range
Tj, Tstg
3. Mounted on 2â³ square FR4 board (1â³ sq. 2 oz. Cu 0.06â³ thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2â³ square FR4 board (1â³ sq. 2 oz. Cu 0.06â³ thick single sided), Steady State.
30
3.0
6.0
30
201
105
62.5
197
97
62.5
â55 to 150
Volts
Amps
Amps
Amps
°C/W
°C
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Notes 1. & 6.)
Characteristics
Symbol Min
Typ
OFF CHARACTERISTICS
DrainâSource Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
V(BR)DSS 30
â
â
27
Zero Gate Drain Current (VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
â
â
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
â
â
Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
â
â
ON CHARACTERISTICS (Note 6.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
VGS(th)
1.0
1.7
Temperature Coefficient (Negative)
â
3.5
Static DrainâSource Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
â
â
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
gFS
â
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
â
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
â
Reverse Transfer Capacitance
Crss
â
SWITCHING CHARACTERISTICS (Note 7.)
TurnâOn Delay Time
td(on)
â
Rise Time
TurnâOff Delay Time
(VDD = 20 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 â¦)
tr
â
td(off)
â
Fall Time
tf
â
1. Negative signs for PâChannel device omitted for clarity.
6. Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2%.
7. Switching characteristics are independent of operating junction temperature.
0.085
0.130
5.0
405
200
55
12.5
16
50
35
Max
Unit
â
Vdc
â
mV/°C
1.0
µAdc
10
100
nAdc
â
â
0.100
0.160
â
Vdc
mV/°C
W
mhos
â
pF
â
â
25
ns
30
90
65
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