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MMDF6N02HD Datasheet, PDF (2/10 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS
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MMDF6N02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3) V(BR)DSS
20
−
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
Gate−Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
IGSS
−
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (Note 3)
VGS(th)
0.5
−
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
(Cpk ≥ 2.0) (Note 3) RDS(on)
−
−
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)
gFS
7.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 3.5 Adc,
VGS = 4.0 Vdc,
RG = 10 Ω)
td(on)
−
tr
−
td(off)
−
tf
−
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 6.0 Adc,
VGS = 4.0 Vdc)
QT
−
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
−
−
Reverse Recovery Time
trr
−
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Typ
−
24.3
−
−
0.3
0.8
2.86
28
42
8.6
515
345
150
12
96
100
130
11
1.2
6.1
3.9
0.84
0.77
102
36
66
0.150
Max
Unit
Vdc
−
−
mV/°C
μAdc
2.5
25
100
nAdc
Vdc
1.2
−
mV/°C
mΩ
35
49
−
Mhos
572
pF
372
178
15
ns
103
108
140
12
nC
−
−
−
1.2
Vdc
−
−
ns
−
−
−
μC
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