MMDF3N02HD Datasheet, PDF (2/12 Pages) Motorola, Inc – DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS

MMDF3N02HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
–
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
–
–
IGSS
–
VGS(th)
1.0
–
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
–
–
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
–
Coss
–
Crss
–
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
–
tr
–
td(off)
–
tf
–
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
–
tr
–
td(off)
–
tf
–
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
QT
–
Q1
–
Q2
–
Q3
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 2.)
(IS = 3.0 Adc, VGS = 0 Vdc)
VSD
–
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
–
Reverse Recovery Time
See Figure 15
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
–
ta
–
tb
–
Reverse Recovery Stored Charge
QRR
–
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
–
–
29
–
mV/°C
µAdc
–
1.0
–
10
–
100
nAdc
1.5
4.0
0.058
0.074
3.88
2.0
–
0.090
0.100
–
Vdc
mV/°C
Ohms
Mhos
455
630
pF
184
250
45
90
11
22
ns
58
116
17
35
20
40
7.0
21
32
64
27
54
21
42
12.5
18
nC
1.3
–
2.8
–
2.4
–
0.79
1.3
Vdc
0.72
–
23
–
ns
18
–
5.0
–
0.025
–
µC
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