 English |
|
|
|
|
|
|
|
| MMBZ27VCWT1G_12 Datasheet, PDF (2/5 Pages) ON Semiconductor – 40 Watt Peak Power Zener Transient Voltage Suppressors | |||
| |||
| ◁ |
MMBZ27VCWT1G
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ⤠25°C
Total Power Dissipation on FRâ5 Board (Note 2) @ TA = 25°C
Derate above 25°C
Symbol
Ppk
°PD°
Value
40
200
1.6
Unit
Watts
°mW°
mW/°C
Thermal Resistance JunctionâtoâAmbient
RqJA
618
°C/W
Junction and Storage Temperature Range
TJ, Tstg
â 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 4 and derate above TA = 25°C per Figure 5.
2. FRâ5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
VBR
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniâDirectional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
Device
Device
Marking
VRWM
Volts
IR @ VRWM
nA
VBR (Note 3) (V)
Min Nom Max
@ IT
mA
MMBZ27VCWT1G
AC
22
50
25.65 27 28.35 1.0
3. VBR measured at pulse test current IT at an ambient temperature of 25°C.
4. Surge current waveform per Figure 4 and derate per Figure 5
VC @ IPP (Note 4)
VC
IPP
V
A
38
1.0
VBR
mV/5C
26
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese