 English |
|
|
|
|
|
|
|
| MMBZ27VAWT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – 40 Watt Peak Power Zener Transient Voltage Suppressors | |||
| |||
| ◁ |
MMBZ27VAWT1G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
@ TL ⤠25°C
Total Power Dissipation on FRâ5 Board (Note 2) @ TA = 25°C
Derate above 25°C
Ppk
°PD°
40
W
200
°mW°
1.6
mW/°C
Thermal Resistance JunctionâtoâAmbient
RqJA
618
°C/W
Junction and Storage Temperature Range
TJ, Tstg
â 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonârepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FRâ5 = 1.0 x 0.75 x 0.62 in.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
ZZT
IZK
ZZK
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
Maximum Zener Impedance @ IZT
Reverse Current
Maximum Zener Impedance @ IZK
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniâDirectional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Device
Device
Marking
VRWM
Volts
IR @
VRWM
nA
Breakdown Voltage
VBR (Note 3) (V)
Min Nom Max
MMBZ27VAWT1G
AA
22
50
25.65
27
28.35
3. VBR measured at pulse test current IT at an ambient temperature of 25°C.
4. Surge current waveform per Figure 5 and derate per Figure 6
@ IT
mA
1.0
VC @ IPP (Note 4)
VC
IPP
V
A
40
1.0
QVBR
mV/5C
24.3
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese