MMBZ15VDLT1_05 Datasheet, PDF (2/6 Pages) ON Semiconductor – 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZ15VDLT1, MMBZ27VCLT1
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 1.0 ms (Note 1) @ T_L ≤ 25°C
Total Power Dissipation on FR−5 Board (Note 2) @ T_A = 25°C
Derate above 25°C
Symbol
P_pk
°P_D°
Value
40
225
1.8
Unit
Watts
°mW°
mW/°C
Thermal Resistance Junction−to−Ambient
Total Power Dissipation on Alumina Substrate (Note 3) @ T_A = 25°C
Derate above 25°C
R_qJA
°P_D°
556
°C/W
300
°mW
2.4
mW/°C
Thermal Resistance Junction−to−Ambient
R_qJA
417
°C/W
Junction and Storage Temperature Range
T_J, T_stg
− 55 to +150
°C
Lead Solder Temperature − Maximum (10 Second Duration)
T_L
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derate above T_A = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I_PP
V_C
V_RWM
I_R
V_BR
I_T
V_BR
I_F
V_F
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I_PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V_RWM
Breakdown Voltage @ I_T
Test Current
Maximum Temperature Coefficient of V_BR
Forward Current
Forward Voltage @ I_F
I
I_F
V_C V_BR V_RWM
II^{RT VF}
V
I_PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V_F = 0.9 V Max @ I_F = 10 mA)
Breakdown Voltage
Device
Device
Marking
V_RWM
Volts
I_R @ V_RWM
nA
V_BR (Note 4) (V)
Min Nom Max
@ I_T
mA
MMBZ15VDLT1, G*
15D
12.8
100
14.3
15
15.8
1.0
(V_F = 1.1 V Max @ I_F = 200 mA)
Breakdown Voltage
Device
Device
Marking
V_RWM
Volts
I_R @ V_RWM
nA
V_BR (Note 4) (V)
Min Nom Max
@ I_T
mA
MMBZ27VCLT1, G*
27C
22
50
25.65 27 28.35 1.0
*The “G” suffix indicates Pb−Free package available.
4. V_BR measured at pulse test current I_T at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
V_C @ I_PP (Note 5)
V_C
I_PP
V
A
21.2
1.9
V_C @ I_PP (Note 5)
V_C
I_PP
V
A
38
1.0
V_BR
mV/5C
12
V_BR
mV/5C
26
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