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| MMBV809LT1_06 Datasheet, PDF (2/3 Pages) ON Semiconductor – Silicon Tuning Diode | |||
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MMBV809LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic â All Types
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
V(BR)R
20
â
â
Vdc
IR
â
â
50
nAdc
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
Min
Typ
Max
MMBV809LT1
4.5
5.3
6.1
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
Typ
75
CR, Capacitance Ratio
C2/C8
f = 1.0 MHz (Note 2)
Min
Max
1.8
2.6
TYPICAL CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
0.5 1
2 3 45
8 10 15
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000
VR = 3 Vdc
TA = 25°C
100
10
0.1
1.0
10
f, FREQUENCY (GHz)
Figure 2. Figure of Merit
1000
VR = 3.0 Vdc
f = 1.0 MHz
800
600
400
0
0.2
0.4
0.6
0.8
1.0
f, FREQUENCY (GHz)
Figure 3. Series Resistance
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
1.2
â75 â50 â25
0 +25 +50 +75 +100 +125
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
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