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MMBV609LT1_06 Datasheet, PDF (2/3 Pages) ON Semiconductor – Silicon Tuning Diode
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MMBV609LT1
ELECTRICAL CHARACTERISTICS (EACH DIODE) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Diode Capacitance
(VR = 3.0 Vdc, f = 1.0 MHz)
Capacitance Ratio C3/C8
(f = 1.0 MHz)
V(BR)R
20
IR
−
CT
26
CR
1.8
Figure of Merit
(VR = 3.0 Vdc, f = 50 MHz)
Q
250
Typ
Max
−
−
−
10
−
32
−
2.4
450
−
Unit
Vdc
nAdc
pF
−
−
TYPICAL CHARACTERISTICS
50
1000
40
f = 1.0 MHz
TA = 25°C
30
VR = 3 Vdc
TA = 25°C
100
20
10
0
1
23
10
5
7
10 20 30 40
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
100
1000
f, FREQUENCY (MHz)
Figure 2. Figure of Merit
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
−50 −25 0 +25 +50 +75 +100 +125
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
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