MMBV409LT1 Datasheet, PDF (2/3 Pages) Leshan Radio Company – Silicon Tuning Diode

MMBV409LT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I_R = 10 mAdc)
V_(BR)R
20
−
−
Vdc
Reverse Voltage Leakage Current
(V_R = 15 Vdc)
I_R
−
−
0.1
mAdc
Diode Capacitance Temperature Coefficient
(V_R = 3.0 Vdc, f = 1.0 MHz)
TC_C
−
300
−
ppm/°C
C_t, Diode Capacitance
V_R = 3.0 Vdc, f = 1.0 MHz
pF
Device
Min
Nom
Max
MMBV409LT1
26
29
32
1. C_R is the ratio of C_t measured at 3 Vdc divided by C_t measured at 8 Vdc.
Q, Figure of Merit
V_R = 3.0 Vdc
f = 50 MHz
Min
200
C_R, Capacitance Ratio
C₃/C₈
f = 1.0 MHz (Note 1)
Min
Max
1.5
1.9
TYPICAL CHARACTERISTICS
40
1000
32
f = 1.0 MHz
24
T_A = 25°C
100
16
V_R = 3 Vdc
T_A = 25°C
8
0
1
23
10
20 30
V_R, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
10
100
10
100
1000
f, FREQUENCY (MHz)
Figure 2. Figure of Merit
100
60
20
10
6.0
2.0
V_R = 15 Vdc
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
0.002
0.001
−60 −40 −20 0 +20 +40 +60 +80 +100 +120 +140
T_A, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
1.04
1.03
V_R = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
−50 −25 0 +25 +50 +75 +100 +125
T_A, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
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