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MMBTH10L Datasheet, PDF (2/5 Pages) ON Semiconductor – VHF/UHF Transistor
◁
MMBTH10L, MMBTH10−4L, SMMBTH10−4L, NSVMMBTH10L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 100 μAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 μAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
V(BR)CEO
25
−
Vdc
−
V(BR)CBO
30
−
Vdc
−
V(BR)EBO
3.0
−
Vdc
−
ICBO
−
nAdc
−
100
IEBO
−
nAdc
−
100
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 mAdc, VCE = 10 Vdc)
MMBTH10LT1G, NSVMMBTH10LT1G
MMBTH10−4LT1G, SMMBTH10−4LT3G
hFE
−
60
−
−
120
−
240
Collector−Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 0.4 mAdc)
Base−Emitter On Voltage
(IC = 4.0 mAdc, VCE = 10 Vdc)
VCE(sat)
−
VBE
−
Vdc
−
0.5
Vdc
−
0.95
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 Mhz)
MMBTH10LT1G, NSVMMBTH10LT1G
MMBTH10−4LT1G, SMMBTH10−4LT3G
fT
650
−
800
−
MHz
−
−
Collector−Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
−
pF
−
0.7
Common−Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Crb
−
pF
−
0.65
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
rb′Cc
−
ps
−
9.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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