MMBTA92LT1G_10 Datasheet, PDF (2/4 Pages) ON Semiconductor – High Voltage Transistors PNP Silicon

MMBTA92LT1G, MMBTA93LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I_C = −1.0 mAdc, I_B = 0)
MMBTA92
MMBTA93
Collector −Base Breakdown Voltage
(I_C = −100 mAdc, I_E = 0)
MMBTA92
MMBTA93
Emitter −Base Breakdown Voltage
(I_E = −100 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −200 Vdc, I_E = 0)
(V_CB = −160 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = −3.0 Vdc, I_C = 0)
MMBTA92
MMBTA93
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I_C = −1.0 mAdc, V_CE = −10 Vdc)
(I_C = −10 mAdc, V_CE = −10 Vdc)
Both Types
Both Types
(I_C = −30 mAdc, V_CE = −10 Vdc)
Collector −Emitter Saturation Voltage
(I_C = −20 mAdc, I_B = −2.0 mAdc)
Base−Emitter Saturation Voltage
(I_C = −20 mAdc, I_B = −2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I_C = −10 mAdc, V_CE = −20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V_CB = −20 Vdc, I_E = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBTA92
MMBTA93
MMBTA92
MMBTA93
MMBTA92
MMBTA93
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_cb
Min
−300
−200
−300
−200
−5.0
−
−
−
25
40
25
25
−
−
−
50
−
−
Max
Unit
−
−
−
−
−
−0.25
−0.25
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
−
−
−
−
−
Vdc
−0.5
−0.5
−0.9
Vdc
−
MHz
pF
6.0
8.0
300
250
200
150
100
50
0
0.1
T_J = +125°C
25°C
-55°C
1.0
10
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
V_CE = 10 Vdc
100
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