MMBTA92L Datasheet, PDF (2/4 Pages) ON Semiconductor – High Voltage Transistors

MMBTA92L, SMMBTA92L, MMBTA93L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I_C = −1.0 mAdc, I_B = 0)
MMBTA92, SMMBTA92
MMBTA93
V_(BR)CEO
Collector −Base Breakdown Voltage
(I_C = −100 mAdc, I_E = 0)
MMBTA92, SMMBTA92
MMBTA93
V_(BR)CBO
Emitter −Base Breakdown Voltage
(I_E = −100 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −200 Vdc, I_E = 0)
(V_CB = −160 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = −3.0 Vdc, I_C = 0)
ON CHARACTERISTICS (Note 3)
V_(BR)EBO
MMBTA92, SMMBTA92
MMBTA93
I_CBO
I_EBO
DC Current Gain
(I_C = −1.0 mAdc, V_CE = −10 Vdc)
(I_C = −10 mAdc, V_CE = −10 Vdc)
h_FE
Both Types
Both Types
Min
−300
−200
−300
−200
−5.0
−
−
−
25
40
Max
Unit
−
−
−
−
−
−0.25
−0.25
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
−
−
−
(I_C = −30 mAdc, V_CE = −10 Vdc)
MMBTA92, SMMBTA92
MMBTA93
25
−
25
−
Collector −Emitter Saturation Voltage
(I_C = −20 mAdc, I_B = −2.0 mAdc)
V_CE(sat)
MMBTA92, SMMBTA92
−
MMBTA93
−
Vdc
−0.5
−0.5
Base−Emitter Saturation Voltage
(I_C = −20 mAdc, I_B = −2.0 mAdc)
V_BE(sat)
−
−0.9
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I_C = −10 mAdc, V_CE = −20 Vdc, f = 100 MHz)
f_T
50
−
MHz
Collector−Base Capacitance
(V_CB = −20 Vdc, I_E = 0, f = 1.0 MHz)
C_cb
pF
MMBTA92, SMMBTA92
−
6.0
MMBTA93
−
8.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
300
250
200
150
100
50
0
0.1
T_J = +125°C
25°C
-55°C
1.0
10
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
V_CE = 10 Vdc
100
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