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MMBTA55LT1G_10 Datasheet, PDF (2/5 Pages) ON Semiconductor – Driver Transistors PNP Silicon | |||
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MMBTA55LT1G, MMBTA56LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage (Note 3)
(IC = â1.0 mAdc, IB = 0)
MMBTA55
MMBTA56
Emitter âBase Breakdown Voltage
(IE = â100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = â60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = â60 Vdc, IE = 0)
(VCB = â80 Vdc, IE = 0)
ON CHARACTERISTICS
MMBTA55
MMBTA56
DC Current Gain
(IC = â10 mAdc, VCE = â1.0 Vdc)
(IC = â100 mAdc, VCE = â1.0 Vdc)
Collector âEmitter Saturation Voltage
(IC = â100 mAdc, IB = â10 mAdc)
Base âEmitter On Voltage
(IC = â100 mAdc, VCE = â1.0 Vdc)
SMALLâSIGNAL CHARACTERISTICS
Current âGain â Bandwidth Product (Note 4)
(IC = â100 mAdc, VCE = â1.0 Vdc, f = 100 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
hFE
VCE(sat)
VBE(on)
fT
Min
Max
â60
â
â80
â
â4.0
â
â
â0.1
â
â0.1
â
â0.1
100
â
100
â
â
â0.25
â
â1.2
50
â
Unit
Vdc
Vdc
mAdc
mAdc
â
Vdc
Vdc
MHz
TURN-ON TIME
-1.0 V
VCC
+40 V
TURN-OFF TIME +VBB
VCC
+40 V
5.0 ms
+10 V
0
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
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