MMBTA42LT1_07 Datasheet, PDF (2/8 Pages) ON Semiconductor – High Voltage Transistor NPN Silicon

MMBTA42LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
hFE
—
25
—
40
—
(IC = 30 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)2
Base–Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1.
40
VCE(sat)
—
VBE(sat)
—
fT
50
Ccb
—
—
Vdc
0.5
0.9
Vdc
—
MHz
pF
3.0
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2