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MMBTA06WT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – Driver Transistor
MMBTA06WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector -- Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Emitter -- Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector -- Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base -- Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
SMALL-- SIGNAL CHARACTERISTICS
Current -- Gain -- Bandwidth Product (Note 2)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
1. Pulse Test: Pulse Width  300 ms, Duty Cycle  2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
Min
V(BR)CEO
80
V(BR)EBO
4.0
ICES
--
ICBO
--
hFE
100
100
VCE(sat)
--
VBE(on)
--
Max
Unit
--
Vdc
--
Vdc
0.1
mAdc
mAdc
0.1
--
--
--
0.25
Vdc
1.2
Vdc
fT
100
--
MHz
5.0 ms
+10 V
0
tr = 3.0 ns
TURN- ON TIME
- 1.0 V
VCC
+40 V
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS < 6.0 pF
TURN- OFF TIME
+VBB
VCC
+40 V
5.0 ms
tr = 3.0 ns
100
Vin
RB
5.0 mF
100
RL
OUTPUT
* CS < 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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