MMBT5401L Datasheet, PDF (2/6 Pages) ON Semiconductor – High Voltage Transistor

MMBT5401L, SMMBT5401L, NSVMMBT5401L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −1.0 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = −100 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = −10 mAdc, I_C = 0)
Collector−Base Cutoff Current
(V_CB = −120 Vdc, I_E = 0)
(V_CB = −120 Vdc, I_E = 0, T_A = 100°C)
V_(BR)CEO
Vdc
−150
−
V_(BR)CBO
Vdc
−160
−
V_(BR)EBO
Vdc
−5.0
−
I_CBO
−
−50
nAdc
−
−50
mAdc
ON CHARACTERISTICS
DC Current Gain
(I_C = −1.0 mAdc, V_CE = −5.0 Vdc)
(I_C = −10 mAdc, V_CE = −5.0 Vdc)
(I_C = −50 mAdc, V_CE = −5.0 Vdc)
Collector −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
Base −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
h_FE
50
60
50
V_CE(sat)
−
−
V_BE(sat)
−
−
−
−
240
−
Vdc
−0.2
−0.5
Vdc
−1.0
−1.0
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I_C = −10 mAdc, V_CE = −10 Vdc, f = 100 MHz)
f_T
MHz
100
300
Output Capacitance
(V_CB = −10 Vdc, I_E = 0, f = 1.0 MHz)
C_obo
−
pF
6.0
Small Signal Current Gain
(I_C = −1.0 mAdc, V_CE = −10 Vdc, f = 1.0 kHz)
h_fe
−
40
200
Noise Figure
(I_C = −200 mAdc, V_CE = −5.0 Vdc, R_S = 10 W, f = 1.0 kHz)
NF
dB
−
8.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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