MMBT5088L Datasheet, PDF (2/5 Pages) ON Semiconductor – Low Noise Transistors

MMBT5088L, MMBT5089L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = 1.0 mAdc, I_B = 0)
V_(BR)CEO
MMBT5088L
30
MMBT5089L
25
Vdc
−
−
Collector −Base Breakdown Voltage
(I_C = 100 mAdc, I_E = 0)
Collector Cutoff Current
(V_CB = 20 Vdc, I_E = 0)
(V_CB = 15 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB(off) = 3.0 Vdc, I_C = 0)
(V_EB(off) = 4.5 Vdc, I_C = 0)
ON CHARACTERISTICS
DC Current Gain
(I_C = 100 mAdc, V_CE = 5.0 Vdc)
V_(BR)CBO
MMBT5088L
35
MMBT5089L
30
I_CBO
MMBT5088L
−
MMBT5089L
−
I_EBO
MMBT5088L
−
MMBT5089L
−
h_FE
MMBT5088L
300
MMBT5089L
400
−
−
50
50
50
100
900
1200
Vdc
nAdc
nAdc
−
(I_C = 1.0 mAdc, V_CE = 5.0 Vdc)
MMBT5088L
MMBT5089L
350
−
450
−
(I_C = 10 mAdc, V_CE = 5.0 Vdc)
MMBT5088L
MMBT5089L
300
−
400
−
Collector −Emitter Saturation Voltage
(I_C = 10 mAdc, I_B = 1.0 mAdc)
Base −Emitter Saturation Voltage
(I_C = 10 mAdc, I_B = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
V_CE(sat)
−
V_BE(sat)
−
Vdc
0.5
Vdc
0.8
Current −Gain — Bandwidth Product
(I_C = 500 mAdc, V_CE = 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance
(V_CB = 5.0 Vdc, I_E = 0, f = 1.0 MHz emitter guarded)
Emitter−Base Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz collector guarded)
Small Signal Current Gain
(I_C = 1.0 mAdc, V_CE = 5.0 Vdc, f = 1.0 kHz)
f_T
C_cb
C_eb
h_fe
MMBT5088L
MMBT5089L
MHz
50
−
pF
−
4.0
pF
−
10
−
350
1400
450
1800
Noise Figure
(I_C = 100 mAdc, V_CE = 5.0 Vdc, R_S = 10 kW, f = 1.0 kHz)
NF
dB
MMBT5088L
−
3.0
MMBT5089L
−
2.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
R_S
i_n
e_n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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