MMBT5087L Datasheet, PDF (2/7 Pages) ON Semiconductor – Low Noise Transistor

MMBT5087L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I_C = −1.0 mAdc, I_B = 0)
V_(BR)CEO
−50
−
Vdc
Collector−Base Breakdown Voltage
(I_C = −100 mAdc, I_E = 0)
V_(BR)CBO
−50
−
Vdc
Collector Cutoff Current
(V_CB = −10 Vdc, I_E = 0)
(V_CB = −35 Vdc, I_E = 0)
ON CHARACTERISTICS
I_CBO
nAdc
−
−10
−
−50
DC Current Gain
(I_C = −100 mAdc, V_CE = −5.0 Vdc)
(I_C = −1.0 mAdc, V_CE = −5.0 Vdc)
(I_C = −10 mAdc, V_CE = −5.0 Vdc)
Collector−Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
h_FE
−
250
800
250
−
250
−
V_CE(sat)
−
−0.3
Vdc
Base−Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
V_BE(sat)
−
0.85
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(I_C = −500 mAdc, V_CE = −5.0 Vdc, f = 20 MHz)
f_T
40
−
MHz
Output Capacitance
(V_CB = −5.0 Vdc, I_E = 0, f = 1.0 MHz)
C_obo
−
4.0
pF
Small−Signal Current Gain
(I_C = −1.0 mAdc, V_CE = −5.0 Vdc, f = 1.0 kHz)
h_fe
250
900
−
Noise Figure
(I_C = −20 mAdc, V_CE = −5.0 Vdc, R_S = 10 kW, f = 1.0 kHz)
(I_C = −100 mAdc, V_CE = −5.0 Vdc, R_S = 3.0 kW, f = 1.0 kHz)
NF
dB
−
2.0
−
2.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL NOISE CHARACTERISTICS
(V_CE = −  5.0 Vdc, T_A = 25°C)
10
7.0
5.0
3.0
2.0 ^{1.0 mA}
I_C = 10 mA
30 mA
100 mA
300 mA
BANDWIDTH = 1.0 Hz
R_S ≈ 0
1.0
10 20
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20
I_C = 1.0 mA
BANDWIDTH = 1.0 Hz
R_S ≈ ∞
300 mA
100 mA
30 mA
10 mA
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 2. Noise Current
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