MMBT4401LT1 Datasheet, PDF (2/8 Pages) Motorola, Inc – Switching Transistor

MMBT4401LT1
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I_C = 1.0 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = 0.1 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = 0.1 mAdc, I_C = 0)
Base Cutoff Current
(V_CE = 35 Vdc, V_EB = 0.4 Vdc)
Collector Cutoff Current
(V_CE = 35 Vdc, V_EB = 0.4 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I_C = 0.1 mAdc, V_CE = 1.0 Vdc)
(I_C = 1.0 mAdc, V_CE = 1.0 Vdc)
(I_C = 10 mAdc, V_CE = 1.0 Vdc)
(I_C = 150 mAdc, V_CE = 1.0 Vdc)
(I_C = 500 mAdc, V_CE = 2.0 Vdc)
Collector −Emitter Saturation Voltage
(I_C = 150 mAdc, I_B = 15 mAdc)
(I_C = 500 mAdc, I_B = 50 mAdc)
Base −Emitter Saturation Voltage
(I_C = 150 mAdc, I_B = 15 mAdc)
(I_C = 500 mAdc, I_B = 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I_C = 20 mAdc, V_CE = 10 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V_CB = 5.0 Vdc, I_E = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz)
Input Impedance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(I_C = 1.0 mAdc, V_CE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(V_CC = 30 Vdc, V_EB = 2.0 Vdc,
I_C = 150 mAdc, I_B1 = 15 mAdc)
Storage Time
Fall Time
(V_CC = 30 Vdc, I_C = 150 mAdc,
I_B1 = I_B2 = 15 mAdc)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Symbol
Min
Max
Unit
V_(BR)CEO
40
V_(BR)CBO
60
V_(BR)EBO
6.0
I_BEV
−
I_CEX
−
Vdc
−
Vdc
−
Vdc
−
mAdc
0.1
mAdc
0.1
h_FE
20
−
−
40
−
80
−
100
300
40
−
V_CE(sat)
−
−
Vdc
0.4
0.75
V_BE(sat)
Vdc
0.75
0.95
−
1.2
f_T
MHz
250
−
C_cb
pF
−
6.5
C_eb
pF
−
30
h_ie
kW
1.0
15
h_re
X 10^{− 4}
0.1
8.0
h_fe
40
500
−
h_oe
mmhos
1.0
30
t_d
−
15
ns
t_r
−
20
t_s
−
225
ns
t_f
−
30
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