MMBT3906L Datasheet, PDF (2/7 Pages) Taiwan Semiconductor Company, Ltd – 350mW, PNP Small Signal Transistor

MMBT3906L, SMMBT3906L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage
(I_C = −1.0 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = −10 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = −10 mAdc, I_C = 0)
Base Cutoff Current
(V_CE = −30 Vdc, V_EB = −3.0 Vdc)
Collector Cutoff Current
(V_CE = −30 Vdc, V_EB = −3.0 Vdc)
ON CHARACTERISTICS (Note 4)
V_(BR)CEO
Vdc
−40
−
V_(BR)CBO
Vdc
−40
−
V_(BR)EBO
Vdc
−5.0
−
I_BL
nAdc
−
−50
I_CEX
nAdc
−
−50
DC Current Gain
(I_C = −0.1 mAdc, V_CE = −1.0 Vdc)
(I_C = −1.0 mAdc, V_CE = −1.0 Vdc)
(I_C = −10 mAdc, V_CE = −1.0 Vdc)
(I_C = −50 mAdc, V_CE = −1.0 Vdc)
(I_C = −100 mAdc, V_CE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
Base −Emitter Saturation Voltage
(I_C = −10 mAdc, I_B = −1.0 mAdc)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
H_FE
−
60
−
80
−
100
300
60
−
30
−
V_CE(sat)
Vdc
−
−0.25
−
−0.4
V_BE(sat)
Vdc
−0.65 −0.85
−
−0.95
Current −Gain − Bandwidth Product
(I_C = −10 mAdc, V_CE = −20 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = −5.0 Vdc, I_E = 0, f = 1.0 MHz)
Input Capacitance
(V_EB = −0.5 Vdc, I_C = 0, f = 1.0 MHz)
Input Impedance
(I_C = −1.0 mAdc, V_CE = −10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I_C = −1.0 mAdc, V_CE = −10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain
(I_C = −1.0 mAdc, V_CE = −10 Vdc, f = 1.0 kHz)
Output Admittance
(I_C = −1.0 mAdc, V_CE = −10 Vdc, f = 1.0 kHz)
Noise Figure
(I_C = −100 mAdc, V_CE = −5.0 Vdc, R_S = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
f_T
C_obo
C_ibo
h_ie
h_re
h_fe
h_oe
NF
MHz
250
−
pF
−
4.5
pF
−
10
kW
2.0
12
X 10^{− 4}
0.1
10
−
100
400
mmhos
3.0
60
dB
−
4.0
Delay Time
Rise Time
(V_CC = −3.0 Vdc, V_BE = 0.5 Vdc,
I_C = −10 mAdc, I_B1 = −1.0 mAdc)
t_d
−
35
ns
t_r
−
35
Storage Time
Fall Time
(V_CC = −3.0 Vdc, I_C = −10 mAdc,
I_B1 = I_B2 = −1.0 mAdc)
t_s
−
225
ns
t_f
−
75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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