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MMBT2369L Datasheet, PDF (2/6 Pages) ON Semiconductor – Switching Transistors
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MMBT2369L, MMBT2369AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
15
−
Vdc
−
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CES
40
−
Vdc
−
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
−
Vdc
−
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.5
−
Vdc
−
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
ICBO
mAdc
−
−
0.4
−
−
30
Collector Cutoff Current
MMBT2369A (VCE = 20 Vdc, VBE = 0)
ICES
mAdc
−
−
0.4
ON CHARACTERISTICS
DC Current Gain (Note 3)
MMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc)
MMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc)
MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc)
MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C)
MMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc)
MMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc)
MMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
−
40
−
120
−
−
120
40
−
−
20
−
−
30
−
−
20
−
−
20
−
−
Collector −Emitter Saturation Voltage (Note 3)
MMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc)
MMBT2369A (IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
Vdc
−
−
0.25
−
−
0.20
−
−
0.30
−
−
0.25
−
−
0.50
Base −Emitter Saturation Voltage (Note 3)
MMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C)
MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc)
MMBT2369A (IC = 100 mAdc, IB = 10 mAdc)
VBE(sat)
Vdc
0.7
−
0.85
−
−
1.02
−
−
1.15
−
−
1.60
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
−
−
4.0
Small Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
hfe
−
5.0
−
−
SWITCHING CHARACTERISTICS
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
ns
−
5.0
13
Turn−On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
ns
−
8.0
12
Turn−Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
ns
−
10
18
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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