MMBFJ309LT1G_09 Datasheet, PDF (2/5 Pages) ON Semiconductor – JFET - VHF/UHF Amplifier Transistor

MMBFJ309LT1G, MMBFJ310LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I_G = −1.0 mAdc, V_DS = 0)
V_(BR)GSS
− 25
−
−
Vdc
Gate Reverse Current (V_GS = −15 Vdc)
Gate Reverse Current (V_GS = −15 Vdc, T_A = 125°C)
I_GSS
−
−
− 1.0
nAdc
−
−
− 1.0
mAdc
Gate Source Cutoff Voltage
(V_DS = 10 Vdc, I_D = 1.0 nAdc)
MMBFJ309
V_GS(off)
− 1.0
−
− 4.0
Vdc
MMBFJ310
− 2.0
−
− 6.5
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(V_DS = 10 Vdc, V_GS = 0)
MMBFJ309
MMBFJ310
I_DSS
12
−
30
mAdc
24
−
60
Gate−Source Forward Voltage
(I_G = 1.0 mAdc, V_DS = 0)
V_GS(f)
−
−
1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V_DS = 10 Vdc, I_D = 10 mAdc, f = 1.0 kHz)
|Y_fs|
8.0
−
18
mmhos
Output Admittance
(V_DS = 10 Vdc, I_D = 10 mAdc, f = 1.0 kHz)
|y_os|
−
−
250
mmhos
Input Capacitance
(V_GS = −10 Vdc, V_DS = 0 Vdc, f = 1.0 MHz)
C_iss
−
−
5.0
pF
Reverse Transfer Capacitance
(V_GS = −10 Vdc, V_DS = 0 Vdc, f = 1.0 MHz)
C_rss
−
−
2.5
pF
Equivalent Short−Circuit Input Noise Voltage
(V_DS = 10 Vdc, I_D = 10 mAdc, f = 100 Hz)
e_n
−
10
−
nVń ^ǸHz
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