MMBFJ177LT1G_11 Datasheet, PDF (2/3 Pages) ON Semiconductor – JFET Chopper

MMBFJ177LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (V_DS = 0, I_D = 1.0 mAdc)
Gate Reverse Current (V_DS = 0 Vdc, V_GS = 20 Vdc)
Gate Source Cutoff Voltage (V_DS = 15 Vdc, I_D = 10 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (V_GS = 0, V_DS = 15 Vdc) (Note 2)
Drain Cutoff Current (V_DS = 15 Vdc, V_GS = 10 Vdc)
Drain Source On Resistance (I_D = 500 mAdc)
Input Capacitance
Reverse Transfer Capacitance
V_DS = 0, V_GS = 10 Vdc
f = 1.0 MHz
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
Symbol
Min
Max
Unit
V_(BR)GSS
30
I_GSS
−
V_GS(off)
0.8
−
Vdc
1.0
nAdc
2.5
Vdc
I_DSS
I_D(off)
r_DS(on)
C_iss
C_rss
1.5
20
mAdc
−
1.0
nAdc
−
300
W
−
11
pF
−
5.5
TYPICAL CHARACTERISTICS
8
VGS = 0 V
7
6
5
VGS = −0.1 V
VGS = −0.3 V
4
VGS = −0.5 V
3
VGS = −0.7 V
2
VGS = −0.9 V
1
0
0
2
4
6
8
10
12
V_DS, DRAIN−SOURCE VOLTAGE (V)
Figure 1. Drain Current vs. Drain−Source
Voltage
14
12
V_GS = 0 V
f = 1 MHz
10
8
6
4
2
0
0
−5
−10
−15
−20
−25
V_DS, DRAIN−SOURCE VOLTAGE (V)
Figure 2. Reverse Transfer Capacitance
32
28
V_GS = 0 V
f = 1 MHz
24
20
16
12
8
4
0
0
−5
−10
−15
−20
−25
V_DS, DRAIN−SOURCE VOLTAGE (V)
Figure 3. Input Capacitance
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